Abstract
With the aim to study the influence of substitutional species on the band schemes and charge transfers in type-II heterostructures, the InAs–GaSb based quantum well structures have been prepared by molecular-beam epitaxy with a replacement of GaSb by GaSbAs and GaAlSb. Galvanomagnetic measurements show a similar behavior of decreasing hole density with increasing alloy composition in both cases, suggesting a transfer process insensitive to the cation–anion nature of the alloying element. That the high electron mobility also decreases with the composition is primarily governed by the degree of lattice mismatch.
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Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
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