Abstract
An extended model for cooling of dense electron-hole plasma in a highly excited polar semiconductor is presented. The model considers carrier energy variation caused by photogeneration and recombination in a dense fermion system. Two nonequilibrium-phonon bottlenecks are employed – first due to LO phonons, reabsorbed by carriers, and second due to recurrent fusion of the products of anharmonic decay of LO phonons. The model is shown to be capable of accounting for a carrier-temperature transient, which was experimentally observed at room temperature in CdS crystallites embedded in glass. Slow-cooling phase with a time constant of ≈ 70 ps was shown to be determined by the second nonequilibrium-phonon bottleneck with some prolongation caused by recombination effects.
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