Carrier Concentration Dependence of Spectral Functions in Strongly Correlated System – Study by the Dynamical Mean Field Theory –

Abstract

We study the formation of itinerant electronic states on carrier doping in a strongly correlated insulator by calculating one-particle-excitation spectral functions. We apply (1) the quantum Monte Carlo method and (2) the exact diagonalization method in the framework of the dynamical mean field theory to a two-band Hubbard model. The parameters of the model are chosen so that the undoped system is a charge-transfer-type insulator. We find that the itinerant states originate from local singlet states formed by hybridized d - and p -holes. We also find asymmetry between hole-doped and electron-doped cases: (1) in the electron-doped case a peak is not observed at the chemical potential in contrast to the hole-doped case; and (2) the mass-enhancement factor in the electron-doped case is smaller than that in the hole-doped case. The results of the one-particle-excitation spectrum and the mass-enhancement factor are discussed in the light of experimental and theoretical results for high- T c cuprates.