Abstract
We have grown composite epitaxial materials consisting of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Although the addition of ErAs particles into the InGaAs matrix increases the free-electron concentration, compensation of these free electrons is possible by depleting electrons from the metal particles through Be acceptor doping of the semiconductor. The room-temperature electron concentration of an ErAs:InGaAs superlattice sample with 0.05 monolayer ErAs per layer can be reduced by >104 by delta-doping the ErAs layers with 7×1012cm−2 of Be. The highest resistivity measured for a Be-doped ErAs:InGaAs superlattice was 350Ωcm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
