Abstract
We analyze electron capture on a defect that exhibits no electron-phonon interaction. In this case, capture occurs by a cascade mechanism via the defect excited states. In direct-band-gap materials, when the temperature is too high to allow the filling of the \ensuremath{\Gamma} excited states at the bottom of conduction band, capture takes place via the excited states of a higher band, provided that they are deep enough. Experimental evidence for capture via the excited states of the L and X bands is provided for several defects or impurities in InP, GaAs, and related alloys.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
