Abstract
We have investigated photoexcited carrier dynamics in as-grown and intermixed InGaAs/GaAs quantum dots and quantum wells by time-resolved photoluminescence with subpicosecond temporal resolution. Experiments were performed in the high excitation regime in the temperature range 60–300 K. At low temperatures, carrier lifetime in the dots is determined by the radiative recombination, while at temperatures over 150 K carrier thermal emission becomes dominant. Carrier capture into the dots was found to be fast and governed by the carrier-carrier scattering. In particular, the carrier capture time of 0.72 ps has been observed at room temperature and high excitation intensity for the intermixed dots.
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