Abstract
In the work we demonstrated the possibility to apply amorphous non-stoichiometric silicon carbide (a-SixC1-x:H) and silicon carbonitride (a-SixC1-x-yNy:H) films for improvement of exploitation characteristics of silicon-based photoelectric devices and optical elements in very wide spectral range - from UV to mid-IR. The a-SixC1-x:H films possessing optical properties required for effective antireflection (AR) effects for silicon (refractive index (n) at λ = 632 nm from 1.86 to 1.98, optical bandgap (Eopt) from 2.7 to 3.1 eV, and extinction coefficient (k) is close to zero practically in all spectral range) were obtained by PE-CVD from methane, silane, hydrogen, and argon gas mixture. To deposit silicon carbonitride films some amount of nitrogen was added to the gas mixture. For the a-SixC1-x-yNy:H films the following optical parameters were obtained: n = 1.76–1.93, Eopt = 3.1–3.4 eV, k~0. It has been shown that the proposed films possess unique mechanical properties and ratio of the films hardness to their Young modulus is very high (H/E > 0.13). It is evidence of the films high wear resistance that is of great importance when the films are used for protection of silicon optical elements in IR spectral range. It is established that the films of both types are very suitable as excellent AR coatings for silicon in the spectral range of Si-based solar cell photosensitivity, telecommunication windows, and mid-IR. Deposition of even single layer AR film allowed us to reduce reflection losses significantly (reflection coefficient (R) at minimum of reflection becomes close to zero). As a result, efficiency of etched multicrystalline Si-based solar cell (SC) was significantly improved. Transmittance of Si-based optical elements with front and rear AR films reached practically 100% in the telecommunication windows spectral range.
Published Version
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