Abstract
Carbon thermal stability in carbon-doped GaAs layers is studied. Epitaxial layers were grown by low-pressure metalorganic chemical vapor deposition extrinsically doped with an atomic carbon concentration around 1×1020 cm−3. The hole concentration is found to be a complex function of the annealing time, increasing from an initial value ∼7.2×1019 cm−3, to some intermediate value whereupon the hole concentration decreases before resuming its increase to a value consistent with the atomic concentration. The observed carrier loss and its subsequent recovery is explained by a double-site switch of one carbon from the CAs–Ga–CAs dimer. First, the carbon moves to an interstitial site Ci, where it behaves like a double donor, followed by a move to a more distant As substitutional site where it behaves as a normal shallow acceptor. This process allows to recover an additional hole concentration equal to the initial carbon dimer concentration. Both processes follow a first-order kinetics with different kinetic coefficients.
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