Carbon redistribution during molecular beam epitaxy of GaAs n-i-p+-i-n structures using trimethylgallium as the p-type dopant

Abstract

The redistribution of carbon during molecular beam epitaxy (MBE) growth of GaAs n-i-p+-i-n structures using silicon and carbon as n-type and p-type dopants, respectively, is shown by secondary ion mass spectrometry (SIMS) analysis and electrochemical capacitance-voltage measurements. Diffusion of carbon into the surface layer is clearly observed when the carbon concentration in the p+ region exceeds ∼6×1019 cm−3. The data also shows that a significant fraction of the diffused carbon is electrically active.