Abstract
As the semiconductor industry faces increasing technological and financial challenges, new concepts have to be assessed. The extraordinary characteristics of carbon nanotubes make them a promising candidate for applications in micro- and nanoelectronics. Catalyst mediated CVD growth is very well suited for selective, in-situ growth of nanotubes compatible with the requirements of microelectronics technology. This deposition method can be exploited for carbon nanotube vias. Semiconducting single-walled tubes can be successfully operated as carbon nanotube field-effect transistors (CNTFETs). A simulation of an ideal vertical CNTFET is presented and compared with the requirements of the ITRS roadmap. Finally, we compare an upgraded CNTFET with the most advanced silicon MOSFETs.
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