Abstract
The effects of palladium (Pd) catalyst film thickness and ammonia (NH 3) in thermal chemical vapor deposition (CVD) growth of carbon nanotubes (CNTs) are systematically compared per the resulting morphologies, Raman spectra and field emission characteristics. The CNT field emitters were tested under identical experimental configurations. Field emission characteristics were described with Fowler-Nordheim field emission theory. Experimental results demonstrate that thermally grown CVD CNTs configured as diode field emitters exhibit low turn-on fields and high emission current density. The work is extended to include the study of gated field emitters or field emission triode, important to achieving high-resolution, full gray-scale imaging for field emission, flat-panel displays. The gated device was fabricated utilizing single-mask, self-aligned gate electrode with conventional integrated-circuit (IC) fabrication process. The CNT-triode showed gate-controlled modulation of emission current where higher gate voltage gives rise to higher anode currents. The triode fabrication process using silicon-on-insulator (SOI) wafers is discussed.
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