Carbon-Nanotube Nanomesh Films with X-Shaped Junctions for Electronic and Photovoltaic Applications

Abstract

The atomic structure and electronic and optoelectronic properties of nanomesh films made of carbon nanotubes with seamless cross-like X junctions are investigated. It is established that the topology of the arrangement of nonhexagonal elements in the contract region of nanotubes determines the energy stability of the atomic structure. It is revealed that the film pore sizes determine the conductivity type. The film is characterized by metal-type conductivity at the smallest pore sizes; as the gap in the band structure increases with an increase in the pore size, the film becomes semiconducting. Films with a minimal gap size have high photovoltaic characteristics. The photocurrent for the considered film models can reach 2.4 mA cm–2 under atmospheric conditions and 3.25 mA cm–2 outside the atmosphere. The presence of a gap in the band structure makes nanomesh films promising for nanoelectronics and optoelectronics.