Abstract
Photodetector (PD) devices based on carbon nanotube/n-silicon heterojunction (NSH) have been realized, with a linear response in a large optical power range, proving competitive performances with respect to a recent nanostructure-based detector and those currently available on the market. The core of these devices is a thin semi-transparent and conductive single-walled carbon nanotubes film with a multitask role: junction element, light absorber and transmitter, photocarrier transporting layer, and charge collector. The PD exhibits rise times of some nanoseconds, detecting light from ultraviolet (240 nm) to infrared (1600 nm), and external quantum efficiency reaching 300% in the VIS spectra region.
Highlights
The extraordinary properties of carbon nanotubes (CNTs) have attracted a lot of research producing countless theoretical and experimental investigations and a large number of potential applications
The typical device I–V characteristic in dark conditions is reported in Figure 2a as a blue line which establishes the rectifying properties of the n-silicon heterojunction (NSH) heterojunction
A typical NSH PD external quantum efficiency (EQE) measurement is shown in the inset of Figure 2a
Summary
The extraordinary properties of carbon nanotubes (CNTs) have attracted a lot of research producing countless theoretical and experimental investigations and a large number of potential applications. Many applications of CNTs in real devices have been reported to deal with CNT random network films [5] In this case, the myriad of CNT-CNT junctions formed in the network, as well as the high number of defects of real CNTs make the charge mobility and transport mechanism in the film different from that of the individual nanotube [6,7,8]. Among the interesting properties of the CNT films, it is worth citing its flexibility due its inherent network nature and the ease to be integrated into existing semiconductor device technologies They are scalable and form rectifying heterojunctions with semiconductors. NSHs, differently from other new interesting materials, promise to largely exploit the large-scale manufacturing processes already in use for Si PDs, reducing the economical efforts for the technological transfer
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