Abstract
The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro-and nanoelectronics are described. Prototypes of diode structures with such emitters are obtained in which the threshold field strength amounts to ∼2 V/μm and the direct to reverse current ratio exceeds 105. The obtained small scatter of characteristics points to the possibility of creating integrated circuits possessing high operation speed and a working temperature range expanded from −60 to +30°C.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
