Abstract
The design and manufacturing technology of carbon nanotube field emitters for novel devices of planar emission vacuum micro-and nanoelectronics are described. Prototypes of diode structures with such emitters are obtained in which the threshold field strength amounts to ∼2 V/μm and the direct to reverse current ratio exceeds 105. The obtained small scatter of characteristics points to the possibility of creating integrated circuits possessing high operation speed and a working temperature range expanded from −60 to +30°C.
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