Carbon nanotube-based photovoltaic receiver with open-circuit voltage larger than 10 V

Abstract

Carbon nanotubes (CNTs) based monolithic optoelectronic integrated circuits (OEICs) have been demonstrated at subwavelength scale, in which all components, including cascading detector, “trion” emitter and electronic processing circuits are monolithically fabricated using CNTs via a CMOS-compatible doping-free technique. In particular, the cascading detector is scaled down to deep-subwavelength scale of λ/12 (λ = 1800 nm) and generates a record photovoltage of 10.35 V under incident power density of 5.78 W cm−2; enabling efficient switch of subsequent electronic processing circuits between on-state and off-state to realize active control of the on-chip CNT emission for amplification (NMOS circuits) or diminution (PMOS circuits). These findings pave a new way for single-material based OEICs to move toward smaller and more powerful in the post-Moore era.