Abstract
Co-implantation of impurities such as carbon (C) has been proven to effectively reduce Transient Enhanced Diffusion (TED) of boron during annealing, enabling the formation of high-quality ultra-shallow junctions - a requirement for advanced-node semiconductor devices. Carbon dioxide (CO2) is traditionally used as the feed gas in implant tools for carbon implantation. Recently, carbon monoxide (CO) has been widely adopted as a replacement to CO2 due to its lower oxygen content. To further improve the carbon implant performance, a mixture of CO, carbonyl fluoride (COF2), and CO2 is studied and reported in this paper. The effects of the additional fluorine and extra oxygen content from COF2 or CO2 are investigated. Our experiments show that with the right balance and mixture level of COF2 and CO2, the carbon mixture can achieve improvements in key implant tool performance parameters, such as beam current and source life. Additionally, the CO/COF2/CO2 mixture stability is studied, and a safe delivery package is described.
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