Carbon ejection from a SiO2/SiC(0001) interface by annealing in high-purity Ar

Abstract

We found that carbon-associated byproducts formed at the dry-oxidized SiO2/SiC(0001) interface could be decomposed and emitted on the SiO2 side by high-purity Ar annealing. We measured the concentration of ejected carbon atoms in SiO2 by secondary ion mass spectrometry, and found that it strongly depended on the condition of oxide formation (dry-oxidation, nitridation treatment, and phosphorus treatment). This work provides indirect but unambiguous evidence for the formation of carbon byproducts at the SiO2/SiC interface, and indicates that phosphorus treatment removes these byproducts, leading to a significant reduction in interface defects.