Abstract
Carbon doping of epitaxial InSb films grown by gas-source molecular beam epitaxy was studied using carbon tetrabromide as the carbon dopant source. Carbon was found to be a p-type dopant in InSb, yielding the highest as-grown acceptor concentrations to date, up to mid 1020 cm−3 as deposited. Room temperature mobilities ranged from 35 to 90 cm2/V s depending upon doping level. The hole concentration was found to be relatively insensitive to growth temperature between 325 and 400 °C. Higher growth temperatures required higher Sb fluxes in order to maintain a constant hole concentration. Hole concentration increased linearly with increasing CBr4 up to 5×1020 cm−3. Further increase in the dopant flow reduced the hole concentration and mobility and produced polycrystalline material.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
