Abstract
Carbon-doped Mn5Ge3 thin films were grown using magnetron sputtering and reactive diffusion or non-diffusive reaction (NDR). The C content, the Curie temperature, and the resonance field difference between the hard and easy axis were measured for all the films, allowing linear relations between these three parameters to be quantitatively determined. Thanks to these functions, the measurement of a single of these parameters allows the two others to be known. The association of the sputtering technique to the NDR process appears as the best way for producing C-doped Mn5Ge3 thin films.
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