Abstract
High performance, selfaligned processed npn and pnp AlGaAs/GaAs HBTs grown by MOMBE are reported. Tin and carbon were used as n- and p-type dopants, respectively. Cutoff frequency and maximum frequency of oscillation of 53 and 128 GHz, respectively, were obtained for npn transistors (2×5 μm2 emitter) and values of 30 and 12 GHz, respectively, were measured for pnp transistors (2×4 μm2 emitter).
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