Caractérisation électrique des interfaces P+-Si-poly/N-c-Si réalisées par dépôt LPCVD de films fortement dopés $in~situ$ au bore

Abstract

Diodes with polycrystalline in situ boron doped emitter deposited by LPCVD on N doped monocrystalline silicon wafers have been analysed electrically with the aim to identify the conduction mechanism through the jonction. In this paper we present the I(V, T) and C(V, T) measurements of the diodes annealed at 1 050 o C during 11 min 45 s in oxygen, argon and nitrogen atmosphere. We also compare the non annealed diode data previously found with our present results, and try to correlate the electrical measurements to the structural analysis [1]. We conclude that the dominant mechanism shows the electrical,quality of the studied structures