Abstract
Picosecond recombination of free holes with shallow acceptors in p-doped GaAs is directly monitored via spectrally and temporally resolved infrared studies. Neutral Zn impurities are photoionized by picosecond excitation in the wavelength range around 5 \ensuremath{\mu}m. The recombination dynamics of the free carriers with ionized acceptors is measured via transient changes of the acceptor deionization band at photon energies close to the band gap. Hole capture is observed on a time scale of up to 100 ps following nonexponential kinetics. The data are analyzed with the help of model calculations considering single-step as well as multiple-step trapping mechanisms. Emission of single longitudinal-optical phonons is found to be the main mechanism of picosecond recombination.
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