Abstract
The surface capture velocity is introduced as a new parameter which should be used to describe the capture and emission processes of carriers in quantum wells. A calculation of the surface velocity is presented for deformation and polarization types of carrier interaction with optical phonons. The dependence of the capture velocity on the free carrier kinetic energy and/or quantum well parameters is investigated. Application of the theory is illustrated with the capture of holes in Si/Si0.8Ge0.2/Si quantum wells.
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