Capacitor‐reused CMOS temperature sensor with duty‐cycle‐modulated output and 0.38°C () inaccuracy

Abstract

A new bipolar junction transistor-based temperature sensor with duty-cycle-modulated output is presented. By employing a capacitor-reused voltage to the duty-cycle converter, the proposed design achieves both area and energy efficiencies simultaneously. The self-controlled chopping, dynamic element matching and digital-assisted calibration techniques are applied as well to further improve the accuracy. Fabricated in a standard 0.13 μm CMOS process, the proposed sensor achieves the measured 3 σ inaccuracy of 0.38 ∘ C from − 10 to 100 ∘ C after one-point calibration while occupying a silicon area of 0.073 mm2.