Abstract
This study investigated dry etching of acrylic in capacitively coupled SF , SF /O and SF /CH plasma under a low vacuum pressure. The process pressure was 100 mTorr and the total gas flow rate was fixed at 10 sccm. The process variables were the RIE chuck power and the plasma gas composition. The RIE chuck power varied in the range of 25~150 W. SF /O plasma produced higher etch rates of acrylic than pure SF and O at a fixed total flow rate. 5 sccm SF / 5 sccm O provided 0.11 µm/min and 1.16 µm/min at 25 W and 150 W RIE of chuck power, respectively. The results were nearly 2.9 times higher compared to those at pure SF plasma etching. Additionally, mixed plasma of SF /CH reduced the etch rate of acrylic. 5 sccm SF / 5 sccm CH plasma resulted in 0.02 µm/min and 0.07 µm/min at 25 W and 150 W RIE of chuck power. The etch selectivity of acrylic to photoresist was higher in SF /O plasma than in pure SF or SF /CH plasma. The maximum RMS roughness (7.6 nm) of an etched acrylic surface was found to be 50% O in SF /O plasma. Besides the process regime, the RMS roughness of acrylic was approximately 3~4 nm at different percentages of O with a chuck power of 100 W RIE in SF /O plasma etching.
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