Capacitive, resistive and conducting characteristics of bismuth ferrite and lead magnesium niobate based relaxor electronic system

Abstract

The ferroelectric relaxor based BFO–PMN [bismuth ferrite (BiFeO3; BFO) and lead magnesium niobate (PbMg1/3Nb2/3O3; PMN)] binary electronic system has been synthesized making use of the solid state chemical reaction technique. The capacitive, resistive and conducting characteristics of the prepared solid solutions [((PbxBi1−x)(Mg0.33xNb0.66xFe1−x)O3) with x = 0.1, 0.2, 0.3 and 0.4] have been studied along with their structural and morphological characteristics. It has been revealed that the dielectric behaviour of BFO–PMN is modified with the addition of PMN content. The nature of phase has also been changed from a general ferroelectric towards a typical relaxor. The comprehensive experimental impedance analysis substantiates the contributions of grain boundary including the grains in the resistive and capacitive characteristics. The prepared compounds illustrate non-Debye type of dielectric relaxation behaviour. The studied material may pave the way for formulation of electronic components.