Abstract
Internal device capacitances in 4H-SiC based devices play an important role in determining their performances. In the present work, an analysis of the capacitance measurements in 4H-SiC trenched and single-implanted (TSI) gate vertical JFET TSI-VJFETs has been undertaken. Physical parameters such as threshold voltage and the related to its value effective channel length as well as channel layer and drift layer doping profiles have been extracted. The measured internal capacitances have been modeled by various models based on device physics.
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