Abstract
In this paper the electronic states of self-organized CdTe quantum dots embedded in ZnTe matrix are studied by means of capacitance–voltage (C–V ) characteristics within the temperature range of 180–300 K. A reference diode of the same layer structure but without quantum dots is studied also for comparison. The C–V characteristics measured for the reference diode exhibit bulk behaviour in contrast to the quantum dots sample for which a characteristic step corresponding to discharging of quantum dots is clearly visible within broad range of temperatures. A quasistatic model based on the self-consistent solution of the Poisson equations is used to simulate the capacitance. By comparison the calculated C–V curve with experimental curve the apparent thermal activation energy for hole emission from the quantum dots to the ZnTe matrix is found to be equal to (0.12±0.03) eV.
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