Abstract
We report the results of capacitance-voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements performed upon a Ga0.47In0.53As/InP quantum well structure. At room temperature, a conduction-band offset ΔEc=(200±10)meV and charge densities σI=±(3±1)*1011 times the electronic charge per cm2 have been measured from C-V experiments. At lower temperature (T≤150K) we have observed an important decrease of the band-offset, considerably larger than a pure thermal effect. We have shown that the explanation lies in the presence of a high concentration of deep traps located at the well-barrier interfaces. Two species A and B have been detected through DLTS experiments with activation energies EtA=90 meV and EtB=195 meV, respectively. The filling of these trap levels at low temperature lowers the band offset from 200 to 120 meV, owing to band repulsion effects.
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