Abstract
A complex study of weakly coupled low doped superlattices GaAs/A l0.3Ga0.7As with large current hysteresis byI–V;C–VanddI/dV–Vcharacteristics is presented. The study of the current branches and correspondingC–Vtransition lines connecting the low- and high- conductance states shows that the shape of theC–Vtransition lines differs drastically with respect to the sweep direction. The observed abrupt reduction of the capacitance signal on the down-sweep transition line is the result of depletion layer formation or domain boundary expansion. The discontinuous evolution of the capacitance signal on the up-sweep transition line is due to domain boundary shrinkage.
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