Abstract
Dependences of differential capacitance of the system degenerate n-InN-electrolyte on the voltage are measured at a frequency of the probing voltage of 300 Hz. Qualitative analysis of these characteristics is performed based on a one-dimensional model of the metal-insulator-semiconductor structure in the region of bias voltages near the flat-band voltage and depletion. It is shown that the magnitude of capacitance in this voltage region is affected by electron states at the interface. The density and energy distribution of these states are evaluated. The form of the voltage dependence of capacitance in the region of accumulation also indicates the existence of the states at the interface, the energy of which exceeds the energy of the conduction band bottom by several tenths of eV. The density of these states increases as the energy increases.
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