Abstract
The low- and high-frequency capacitance–voltage characteristics of a selectively doped AlxGa1−xAs/GaAs heterostructure containing deep traps in the AlxGa1−xAs layer are calculated. It is shown that the low-frequency capacitance–voltage characteristic features a rising portion when the deep traps are localized at the heterointerface, this rising portion being due to the onset of emptying of the deep traps. The calculated results agree with the experimental data.
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