Abstract
Capacitance-Voltage (C-V) characteristics of Au/PrB2Cu3Oy/YBa2Cu3Ox structure were studied. YBa2Cu3Ox and PrBa2Cu3Oy were deposited by rf magnetron sputtering. Deposition temperatures were 700°C for YBa2Cu3Ox and 690°C for PrBa2Cu3Oy. Capacitance was measured at liquid-helium temperature. At this temperature PrBa2Cu3Oy behaves as an insulator, and C-V characteristics of Au/PrBa2Cu3Oy/YBa2Cu3Ox as a MIS diode can be measured. From analyses of C-V characteristics, a depletion layer was found to exist near the PrBa2Cu3Oy/YBa2Cu3Ox interface when DC bias was zero. The acceptor density of this layer was calculated to be about 1016/cm3 from C-V characteristics.
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