Abstract
AbstractHeterostructures of 2D and 3D materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties. Here, a method to analyze measured capacitance–voltage (C–V) data of G/Si Schottky diodes connected in parallel with G/silicon dioxide/Si (GIS) capacitors is introduced. The accurate extraction of the built‐in potential (Φbi) and the Schottky barrier height (SBH) from the measurement data independent of the Richardson constant is also demonstrated.
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