Abstract
AbstractCapacitance‐frequency dependences for InGaN/GaN multiple‐quantum‐well light‐emitting structures grown by MOCVD are investigated at various temperatures and bias voltages. The charge relaxation in a quantum well is found to be satisfactorily described by two emission processes with different dependences of emission rate on temperature. It is shown that in typical InGaN/GaN lightemitting structures, one or a few quantum wells can be filled with electrons even for the relatively high reverse biases applied to the structure and contribute to the measured capacitance. This allows to explain the observed temperature and frequency dependences of apparent carrier concentration profiles obtained under capacitance–voltage profiling in these structures. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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