Abstract
AbstractWe investigate defects at the interface in heterodiodes of hydrogenated amorphous silicon and monocrystalline silicon by frequency and temperature dependent capacitance measurements. The interpretation of the experimental results is supported by numerical simulations of capacitance experiments via transient calculations of defect charging and decharging in the diodes. A defined variation of waver surface treatments prior to amorphous silicon deposition shows a clear correlation of interface defects determined by capacitance measurements with current-voltage characteristics.
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