Capacitance Properties in Ba0.3Sr0.7Zr0.18Ti0.82O3 Thin Films on Silicon Substrate for Thin Film Capacitor Applications

Xiaoyang Chen,Taolan Mo,Ping Yu,Binbin Huang,Yun Liu

doi:10.3390/cryst10040318

Xiaoyang Chen, Taolan Mo + Show 3 more

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https://doi.org/10.3390/cryst10040318

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Journal: Crystals	Publication Date: Apr 19, 2020
Citations: 5	License type: CC BY 4.0

Affiliation: Sichuan University

Abstract

Crystalline Ba0.3Sr0.7Zr0.18Ti0.82O3 (BSZT) thin film was grown on Pt(111)/Ti/SiO2/Si substrate using radio frequency (RF) magnetron sputtering. Based on our best knowledge, there are few reports in the literature to prepare the perovskite BSZT thin films, especially using the RF magnetron sputtering method. The microstructure of the thin films was characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), and capacitance properties, such as capacitance density, leakage behavior, and the temperature dependence of capacitance were investigated experimentally. The prepared perovskite BSZT film showed a low leakage current density of 7.65 × 10−7 A/cm2 at 60 V, and large breakdown strength of 4 MV/cm. In addition, the prepared BSZT thin film capacitor not only exhibits an almost linear and acceptable change (ΔC/C ~13.6%) of capacitance from room temperature to 180 °C but also a large capacitance density of 1.7 nF/mm2 at 100 kHz, which show great potential for coupling and decoupling applications.

Highlights

The increasing demand for high-density and highly integrated electronic passive components in the microelectronics industry, has greatly accelerated research on thin film capacitors with high capacitance density and advanced functional dielectric films with high dielectric constant and appropriate dielectric strength [1,2,3]
It is agreed that the detected X-ray diffraction (XRD) peaks are almost the same, which indicates the perovskite BSZT
The cross-section scanning electron microscopy (SEM) photograph in Figure 1B shows that the prepared BSZT thin films show a dense, cracks-free, uniform microstructure, and the clear structure of the Pt/BSZT/Au thin film capacitor is visible

Summary

Introduction

The increasing demand for high-density and highly integrated electronic passive components in the microelectronics industry, has greatly accelerated research on thin film capacitors with high capacitance density (capacitance per unit area) and advanced functional dielectric films with high dielectric constant and appropriate dielectric strength [1,2,3]. Except for high capacitance density and appropriate electric breakdown strength, temperature stability is another very important parameter for dielectric capacitor applications [4]. Standardization (CENELEC), have clear demands of different temperature stability for various capacitor applications [5]; for instance, ∆C/C over the temperature range in X7R ceramics capacitor is lower than. According to these standards, the ferroelectric materials which exhibit paraelectric behavior over the working temperature range, can have a bigger dielectric constant than the linear dielectrics, and can satisfy some EIA Class I or EIA Class II ceramics capacitors with a high requirement of temperature stability, like high-frequency capacitors, and coupling and decoupling applications. Compared with STO films, the Ba1−x Srx TiO3 (BST) thin films have a higher dielectric constant, which has currently become very attractive for higher integration of Crystals 2020, 10, 318; doi:10.3390/cryst10040318 www.mdpi.com/journal/crystals

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