Abstract

We investigate new schemes of InP-based heterostructure barrier varactors with the aim of enhancing the capacitance nonlinearity of the devices. Starting from a generic step-like InGaAs/InAlAs/AlAs single barrier heterostructure, planar-doped and buried InAs quantum-well barrier heterostructures were successfully fabricated. It is shown that both solutions lead to more efficient screening of electric field near equilibrium and hence to improvement in the capacitance-voltage ratios with values as high as /spl sim/7:1. Under bias, the capacitance modulation is governed by an escaping mechanism in contrast to the conventional depletion operation mode observed for conventional varactors.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call