Abstract
A new theory for the junction capacitance in the case of free electron freeze-out into dopant levels is presented. It is shown that drastic changes in the capacitance properties at low temperatures are due to the sharp increase of the width of the particular region where the modulation of the space charge by a small high-frequency AC signal takes place (the so-called Debye tail). On the basis of an analysis of the exact Poisson equation we derive simple and accurate expressions for high- and low-frequency capacitance which properly take into account the Debye tail effects. It is shown that the anomalous capacitance properties in AlxGa1-xAs epitaxial layers governed by the DX centres can consistently be described over a wide temperature range on the basis of our analysis.
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