Abstract
Impedance spectroscopy measurements on SnO2 thick films were carried out in an air atmosphere and for temperatures between 25 and 425 °C. Capacitance and resistance analyses reveal the mechanisms responsible for experimental responses. Four different contributions to the overall capacitance and resistance were distinguished and assigned to the bulk, the grain boundary, the electrodes, and the presence of deep traps. The effects of trap states on the electrical behavior of the sensor were explored and a modified equivalent circuit model is proposed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of materials science. Materials in electronics
Paper Title
Journal
Date
