Abstract
By measuring scattering parameters, the impedance of an AlAs/GaAs double barrier resonant tunneling diode with asymmetric spacer layers has been obtained up to 40 GHz. It is found that the impedance at various biases can be described well by the lumped equivalent circuit representation. A hysteresis is observed in the impedance measurement in the negative differential resistance region. This hysteresis, unlike the one observed in the dc current-voltage measurement, is not distorted by oscillations and it may be attributed to the load-line effect due to the internal series resistance. Self-consistent calculations have been used to predict the capacitance-voltage curve derived from the impedance measurements. Peaks in capacitance found in the negative differential resistance region are accompanied by a smaller peak. Calculation indicates that the smaller peak is due to electrons discharging from the accumulation region in the undoped region adjacent to the emitter barrier.
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