Abstract
The carrier effective masses of CaO in the cubic phase are estimated by ab initio calculations, which are used for the simulation of Si/CaO metal–oxide–semiconductor (MOS) devices by solving Schrödinger and Poisson equations self-consistently. The possibility of using CaO as a gate dielectric material for MOS device applications is then discussed. The theoretical simulations point to the possibility of using CaO as a gate dielectric, but thin films of CaO on silicon still present roughness that precludes its actual use as a gate dielectric material.
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