Abstract
The method of pressure assisted studies of thermostimulated electron emission from resonant DX-levels was used to study the structure of thermal emission from Te in AlxGa1-xAs(x=0.15, 0.2, 0.25). Seven or eight components contributing to the emission process were found, as can be expected considering the possible alloy-splitting effect for a group-VI DX center in the negative-U model. The emission barriers depend on pressure and alloy composition. The possible correspondence between the configurations of DX centers and the different emission components is found, and the estimation of level positions is given. The obtained results are compared with the results for a multiple level structure of the Si-DX center. Both the similarities and differences can be understood on the grounds of a negative-U model of the DX-center.
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