Abstract
The impact of semiconductor/oxide interface traps (ITs) on the turn-on characteristics of tunnel field-effect transistors (TFETs) is carefully investigated through TCAD. IT density is treated as a 2-D continuum. Both a conventional and an advanced nanowire TFET, designed to fulfill ITRS specs, are addressed. Surprisingly, in conventional TFETs, high concentrations of acceptor-like ITs can suppress device ambipolarity, thus reducing transistor's OFF-state current.
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