Abstract
Herein we present a theoretical foray on crucial role played by the graphitic tunnelling barrier in tuning spintronic feature of two-dimensional insulating graphene layer sandwiched between two ferromagnetic graphitic carbon nitride (g- C4N3) electrodes. We mainly focused on the tuning of spin filter efficiency due to the alteration in tunnelling width. 100% spin filter efficiency reported at each tunnelling width. High degree of spin filter efficiency is restored even at finite bias over a wide range of bias range -1.0 V to +1.0 V. Entire observation have been explained by analysing transmission spectrum at zero bias and a molecular level origin of the observed spintronic response of the device have been provided by analysing the Molecular Projected Self-Consistent Hamiltonian states (MPSH) and transmission pathways of the system.
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