Can 3-D Devices Extend Moore's Law Beyond the 32 nm Technology Node?

Abstract

Beyond 2007, when the channel length is projected to be 25 nm, effective scaling of classical planar bulk MOSFETs is expected to come to an end. Below 25 nm channel length, achieving adequate electrostatic control of short channel effects poses the most serious challenge. Non-classical double-gate, ultrathin-body transistors offer to minimize short-channel effects and allow for more aggressive scaling. Several three- dimensional (3-D) multigate structures such as FinFET, Trigate, MIGFET, ITFET have been demonstrated with good electrical characteristics down to gate lengths of 10 nm. The manufacturing of 3D devices is entirely compatible with the integration processes employed for planar CMOS MOSFETs. Provided that fabrication, yield, design, and cost issues can be rendered tractable, 3D devices are poised to breathe new life into Moore's Law and close the gap between traditional CMOS planar MOSFETs and post-CMOS-era starting at gate lengths of 6 nm.