Abstract
Photoconductance-calibrated photoluminescence lifetime imaging (PC-PLI) is a fast and easy-to-apply method for spatially resolved carrier lifetime measurements of crystalline silicon wafers. The photoluminescence signal in arbitrary units is converted into absolute values of the actual carrier lifetime by measurements of the photoconductance of the silicon wafer. We determined a calibration function which is valid for wafers of arbitrary dopant densities by utilizing a fundamental relationship between photoluminescence and dopant density. In principle, a single measurement of the relation between photoluminescence signal and excess carrier density is sufficient to obtain this calibration function due to its dependence on the dopant density. We demonstrate that PC-PLI allows high resolution lifetime measurements down to injection levels of 10 cm and is in agreement with light-biased microwave-detected photoconductance decay (MW-PCD) lifetime mappings.
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