Abstract

Results of differential scanning calorimetry of high purity Ge x As 40− x Se 40Te 20 ( x=0–40) chalcogenide glasses are reported. The glass transition temperatures and crystallization behavior were studied under non-isothermal conditions at different heating rates (2.5–35 K/min). The glass transition temperature changes from 140 °C up to 320 °C with increasing the Ge content in Ge x As 40− x Se 40Te 20 glass. The studied glasses with x≤35 have no exothermal peaks of crystallization, indicating their high glass-forming ability. The glass of Ge 40Se 40Te 20 composition has one-stage glass transition and double-stage crystallization process during phase change. The activation energy of the glass transition ( E g), the activation energy of crystallization ( E c), the Avrami exponent ( n), the frequency factor ( K 0) and the crystallization criteria of Ge 40Se 40Te 20 glass were determined.

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