Abstract
Vacancy-oxygen complexes VnOm (n, m ≥ 1) in crystalline silicon are nucleation centers for oxygen precipitates, which are widely used as internal getters in modern technologies of production of silicon-based electronic devices and integrated circuits. For the controllable formation of oxygen precipitates in Si crystals in the technology processes the methods of determination of concentrations of the VnOm complexes are required. The aim of the present work was to find values of the calibration coefficients for determination of concentrations of the VnOm defects in Si from intensities of infrared (IR) absorption bands associated with the local vibrational modes (LVM) of these complexes. A combined electrical (Hall effect) and optical (IR absorption) study of vacancy-oxygen defects in identical silicon crystals irradiated with 6 MeV electrons was carried out. Based on the analysis of the data obtained, the values of the calibration coefficient for the determination of concentration of the vacancy-oxygen (VO) complex in silicon by the infrared absorption method were established: for measurements at room temperature (RT) – NVO = 8.5 · 1016 · αVO-RT cm–3, in the case of low-temperature (LT, Т ≡ 10 K) measurements – NVO = 3.5 · 1016 · αVO-LT cm–3, where αVO-RT(LT) are absorption coefficients in maxima of the LVM bands due to the VO complex in the spectra measured at corresponding temperatures. Calibration coefficients for the determination of concentrations of other VnOm (VO2, VO3, VO4, V2O and V3O) complexes and the oxygen dimer (O2) from an analysis of infrared absorption spectra measured at room temperature have been also determined.
Highlights
Oxygen is one of the most abundant and technologically important impurities in sili con [1]
Oxygen concentration in silicon crystals grown by the Czochralski technique (Cz-Si) is in the range of (5–10) · 1017 cm–3, often exceeding concentrations of other impurity atoms
Most these oxygen-related centers give rise to local vibrational mode (LVM) lines, which can be detected by the IR absorption spectroscopy [2, 4]
Summary
Oxygen is one of the most abundant and technologically important impurities in sili con [1]. Interstitial oxygen atoms in Si are electrically neutral and immobile at RT, they effectively interact with intrinsic lattice defects, vacancies and self-interstitials, other impurity atoms and themselves upon radiation and thermal treatments, so contributing to the formation of a large variety of electrically and optically active oxygen-related radiation- and thermally-induced defects [1, 2]. Most these oxygen-related centers give rise to local vibrational mode (LVM) lines, which can be detected by the IR absorption spectroscopy [2, 4]. The available information on calibration coefficients for the determination of concentrations of the vacancy-oxygen related complexes by IR absorption is very limited [12,13,14]
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