Abstract
Abstract The systemic behavior of a Semiconductor Optical Amplifier model was optimized through extensive simulations, reaching reasonable approximation to experimental obtained from commercial devices for the optical gain versus bias current, for different optical inputs powers (-25 up to 0 dBm), and for the gain saturation profile for different I-bias (0 up to 180 mA). For that, parameters such as active region thickness, confinement factor, linear gain coefficient, and the transparency current were adjusted by the presented method. The method can be applied for different SOAs, enabling more accurate numerical predictions for black-box devices.
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